Tachyon™ SMO

Source and Mask co-Optimization

Extending ArF for low k₁ imaging.

Tachyon SMO co-optimizes and analyzes scanner source and mask design simultaneously, ensuring an optimized process window from R&D through production while minimizing pitch and number of exposure per layer.

Complete Low-k₁ Enabling Solution path

Tachyon SMO is tightly integrated with ASML's leading-edge scanners and Brion's computational lithography solutions, enabling relevant information such as modeled illumination profiles to be used in the optimization of wafer imaging performance. Tachyon SMO is targeted for use by lithography technology development organizations of semiconductor manufacturers. It can be easily used to develop new lithography processes and optimize existing processes at the design, photomask and imaging levels. Use cases include design rule validation and production illumination optimization.

ASML Scanner Database

Tachyon SMO's database includes the available illumination conditions for ASML's advanced scanner platforms, as well as Jones Pupil and Diffractive Optical Element (DOE) data files. It also uses the most advanced illumination predictive models for custom and freeform sources to ensure that manufacturable solutions are found with the most accurate analysis available.

Tachyon SMO Advantages

• Enables ArF extension for low k₁ imaging
  - Validate next generation design rules
  - Minimize pitch and number of exposures per layer
• Leverages ASML's unique capabilities
  - ASML advanced scanner illumination (i.e. custom DOE)
  - Tachyon advanced mask, inverse and RET capabilities

Source-Mask Co-Optimization
Tachyon SMO Features

• Customized simulation and optimization engines
• Edge placement error (EPE) metric optimization
• ASML's most advanced custom and freeform DOE models
• Recommends manufacturable sources and masks
  

More Tachyon SMO Information:

Data Sheet (.pdf)
Press Release